Wiring forming method

ABSTRACT

After a wiring material layer ( 14 ) which is made of WSi 2  or the like is formed on an insulation film covering a semiconductor substrate ( 10 ), a first antireflection coating film ( 16 ) which is made of TiON or TiN and a second antireflection coating film ( 18 ) which is made of an organic material are sequentially formed on the wiring material layer ( 14 ). Resist patterns ( 20   a  to  20   c ) are formed on the second antireflection coating film ( 18 ) by photolithography. The dry etching of the second antireflection coating film ( 18 ) is performed using the resist patterns ( 20   a  to  20   c ) as masks, after which the dry etching of the first antireflection coating film ( 16 ) is conducted using the resist patterns ( 20   a  to  20   c ) and patterns ( 18   a  to  18   c ) of the second antireflection coating film ( 18 ) as masks. The dry etching of the wiring material layer ( 14 ) is effected using the resist patterns ( 20   a  to  20   c ), the patterns ( 18   a  to  18   c ) of the second antireflection coating film ( 18 ) and patterns ( 16   a  to  16   c ) of the first antireflection coating film ( 16 ) as masks. The resist patterns ( 20   a  to  20   c ) and the patterns ( 18   a  to  18   c ) of the second antireflection coating film ( 18 ) are removed. Lamination layers, each including one of patterns of the wiring material layer ( 14 ) and one of the patterns of the first antireflection coating film ( 16 ), form wiring layers. The resist patterns ( 20   a  to  20   c ) and the patterns of the second antireflection coating film ( 18 ) may be removed after the etching of the first antireflection coating film ( 16 ), and the wring material layer ( 14 ) may be etched using the patterns of the first antireflection coating film ( 16 ) as masks.

RELATED APPLICATIONS

[0001] This application is a continuation of U.S. patent applicationSer. No. 09/969,270, filed Oct. 1, 2001, which is a division ofapplication Ser. No. 09/109,443, filed Jul. 2, 1998, the disclosures ofwhich are incorporated herein by reference.

BACKGROUND OF THE INVENTION

[0002] a) Field of the Invention

[0003] The present invention relates to a wiring forming method which issuitable to form a fine wiring in an LSI or the like, and moreparticularly to a wiring forming method aimed at improving the precisionof the size of wiring patterns by forming antireflection coating on awiring film and under a resist layer.

[0004] b) Description of the Related Art

[0005] A process for forming a wiring is indispensable for themanufacturing of a semiconductor integrated circuit. The wiring becomescomplicated along with an improvement in the integration density, andthe formation of a fine wiring and a multilayered wiring is required.After isolation regions and a large number of elements are formed in asemiconductor substrate, wiring for connecting those elements to eachother is patterned. Wiring patterns are formed by depositing a wiringlayer, forming resist patterns on the wiring layer and etching thewiring layer through utilization of the resist patterns as masks. If thebase on which the wiring layer is formed is uneven, however, the surfaceof the wiring layer may also become uneven and have convex and concaveparts (projections and recesses). Generally speaking, the wiring layerhas a high reflectance with respect to light, especially with respect toshort-wavelength light. When coating a resist layer on the unevensurface of the wiring layer and exposing the resist layer to light, thereflection of the light from the wiring layer is a problem.

[0006] A concave part of the surface of the wiring layer may form aconcave mirror and the light reflected from the concave mirror may beconverged at a region which is not to be exposed to light (this is knownas “halation”). The halation causes the thinning and thickening of thewiring patterns, the breaking of the wiring and the formation ofisolated spots.

[0007] A convex part of the surface of the wiring layer may form aconvex mirror and the light reflected from the convex mirror mayilluminate even a region which is not exposed to light. This degradesthe accuracy of the light exposure.

[0008] The above-described phenomena can be reduced by reducing thelight reflection from the underlying surface at the time of subjectingthe resist layer to the light exposure.

[0009] It is generally known that in the case of forming a resist layerwith the required patterns on a wiring material layer having a highreflectance by photolithography, antireflection coating is providedunder the resist layer (and on the wiring material layer) so that thelight reflection from the wiring material layer is suppressed to improvethe pattern transfer accuracy. An inorganic single layer which is madeof TiON, TiN, SiON, SiN or the like is often employed as anantireflection coating film of this type. Sometimes an organic singlelayer which can be formed by a simple coating process is adopted (asseen from Published Unexamined Japanese Patent Applications Kokai Nos.61-231182, 62-62523 and 62-63427, for example).

[0010] In the case of employing a TiON (or TiN) single layer film as theantireflection coating film, the effect of preventing the reflection ofa KrF excimer laser beam (having a wavelength of 248 nm) used in the farultraviolet ray exposure is not satisfactory.

[0011]FIG. 13 shows the dependence of the reflectance on the filmthickness. This dependence was obtained by performing a computersimulation as regards a TiON film P provided on a WSi₂ (tungstensilicide) layer.

[0012] Reflectivity of a multi-layer structure was obtained by computersimulation under the following conditions.

[0013] On a substrate, m layers are stacked. The uppermost layer exposedto air (n₀=1, k₀=0) is called the first layer. The underlying layers arecalled the second, third, . . . , and m-th layers. The substrate iscalled the (m+1)-th layer. The real part and the imaginary part of thecomplex refractive index ñ_(l) of the i-th layer are denoted n_(l) andk_(l). Therefore, ñ_(i)=n_(l)−ik_(i). The complex reflectivity isdenoted by r, and the complex transmissivity is denoted by t. Complexreflectivities at the uppermost surface, the first, second, third, . . ., interfaces are denoted by r₀, r₁, r₂, r₃, . . . . The complexreflectivity on the substrate surface is r_(m). Complex transmissivityat the first, second, third, . . . interfaces are denoted by t₁, t₂, t₃,. . . . The complex transmissivity at the substrate surfaces is t_(m).These notations are shown in FIG. 14.

[0014] The intensity reflection on the substrate surface R_(m) is

R _(m) =↑r _(m)|²=|(1−ñ _(m−1))/(1+ñ _(m+1))|²

[0015] The complex reflectivity of the j-th layer r_(j−1) is

r _(j−1) =[{exp(−2iØ _(j))}(F _(j) −r _(j))−F _(j)(1−F _(j) r _(j))]/[F_(j) {exp(−2iØ _(j))}(F _(j) −r _(j))−(1−F _(j) r _(j))],

[0016] where

[0017] F_(j)=(n₀−ñ_(j))/(n₀+ñ_(j)),

[0018] n₀=1,

[0019] Ø_(j)=2λñ_(j)d/γ,

[0020] γ: wavelength, and

[0021] d: thickness of the layer.

[0022] The simulation adopted obtains r_(m−1) by substituting r_(m),then r_(m−2) by substituting r_(m−1), . . . and r₀ by substitutingr_(j).

[0023] The intensity reflection becomes

R_(i)=|r_(i)|².

[0024] The simulation conditions in that case were as follows:

[0025] Wavelength of light: 248 nm

[0026] Refractive index “n” and

[0027] extinction coefficient “k” of TiON film:

[0028] n=2.28

[0029] k=1.5

[0030] Refractive index “n” and

[0031] extinction coefficient “k” of WSi₂ layer:

[0032] n=2.5

[0033] k=3.15

[0034] Reflectance at TiON/WSi₂ interface: 54.9%

[0035] It can be understood from FIG. 13 that even though the filmthickness was set at the optimum value, the reflectance could only bereduced to approximately 30% and thus the effect of preventing the lightreflection was not satisfactory.

[0036] In the case of employing an SiON (or SiN) single layer film asthe antireflection coating film, a CVD (Chemical Vapor Deposition)apparatus is required for the film formation, which lacks simplicity. Ifa film having an ideal refractive index and extinction coefficient isintended, the realization of both the uniformity of the film thicknessand throughput is difficult.

[0037] In the case of using an organic single layer film as theantireflection coating film, the precision of the size of the wiringpatterns is low.

[0038] The organic antireflection coating film is made of an organicmaterial of the same kind as a resist. An etching gas which containsoxygen as the main component is frequently used in the dry etching ofthe organic film. When the organic antireflection coating film issubjected to the anisotropic dry etching process using the resistpatterns as masks after the formation of the resist layer, not only theantireflection coating film but also the resist layer is etched. In afilm thickness range B shown in FIG. 12, the antireflection coating filmis thick, and accordingly the time required for the etching is long. Dueto this, the amount of shift in the size of the resist layer (the amountof thinning) is large, resulting in the degraded precision of the sizeof the wiring patterns.

[0039]FIG. 12 shows the dependence of the reflectance on the filmthickness. This dependence was obtained by performing a computersimulation as regards an organic antireflection coating film Q providedon an WSi₂ layer. The organic antireflection coating film Q may beformed of acrylic acid resin having side chains which contain organicgroup effectively absorbing KrF excimer laser light of a main wavelengthof 248 nm, for example:

[0040] where R is a portion absorbing light of a wavelength 248 nm, suchas

[0041] x=10 mol % to 80 mol %, and

[0042] y=20 mol % to 90 mol %.

[0043] Computer simulation was done using the formulae as describedabove. The simulation conditions in that case were as follows:

[0044] Wavelength of light: 248 nm

[0045] Refractive index “n” and

[0046] extinction coefficient “k” of film Q:

[0047] n=1.654

[0048] k=0.23

[0049] Refractive index “n” and

[0050] extinction coefficient “k” of WSi₂ layer:

[0051] n=2.5

[0052] k=3.15

[0053] Reflectance at film Q/WSi₂ interface: 54.9%

[0054] It can be understood from FIG. 12 that in a film thickness rangeA, for example, reflectance variations versus film thickness variationsare considerable. Normally the surface on which a wiring is to be formedis uneven and has convex and concave parts, and an organicantireflection coating film is formed on such a surface by a spincoating method or the like. A portion of the antireflection coating filmwhich is located on the top of a convex part and another portion of theantireflection coating film which is located on the bottom of a concavepart differ considerably in thickness from each other. In such a case,when the organic antireflection coating film is formed within a filmthickness range like the range A, the reflectance variations are solarge that the accuracy of the transfer of fine patterns is degraded. Inconsideration of this, the organic antireflection coating film is formedwithin a film thickness range such as the range B in which thereflectance variations are small. In the film thickness range B,however, the antireflection coating film has a large thickness ofapproximately 100 nm.

[0055] When the organic antireflection coating film is formed on theuneven surface by the spin coating method or the like, a portion of theantireflection coating film which is located on the top of a convex partof the surface and another portion of the antireflection coating filmwhich is located on the bottom of a concave part of the surface differconsiderably from each other. In order to completely remove theantireflection coating film from the top of the convex or higher levelpart and the bottom of the concave or lower level part by subjecting theantireflection coating film to the anisotropic dry etching process whichuses the resist layer as a mask, over-etching has to be performed evenafter the wiring material layer appears at the top of the convex orupper level part where the antireflection coating film is relativelythin and until the wiring material layer appears also at the bottom ofthe concave or lower level part where the antireflection coating film isrelatively thick. Due to this, the amount of shift in the size of theresist layer is increased, degrading the precision of the size of thewiring patterns.

SUMMARY OF THE INVENTION

[0056] It is accordingly an object of the present invention to provide awiring forming method which can improve the precision of the size of thewiring patterns.

[0057] According to one aspect of the present invention, there isprovided a wiring forming method comprising the steps of: forming awiring material layer on an insulation film covering one of majorsurfaces of a substrate; forming a first antireflection coating filmmade of one of TiON and TiN on the wiring material layer; stacking asecond antireflection coating film made of an organic material directlyon the first antireflection coating film; coating a resist layer on alamination film which includes the first and second antireflectioncoating films, and exposing the resist layer to light in accordance withpredetermined wiring patterns; forming resist patterns by developing theresist layer which has been exposed to light; and selectively removingthe second antireflection coating film by anisotropic dry etchingprocess which uses the resist patterns as masks, in order to leavepatterns of the second antireflection coating film which correspond tothe resist patterns.

[0058] Since the first antireflection coating film which is made of TiONor TiN is provided under the second antireflection coating film which ismade of an organic material, the thickness of the second antireflectionfilm can be reduced. A reduction in the thickness of the secondantireflection film results in a reduction in the time required forperforming the dry etching of the second antireflection coating filmsthrough utilization of the resist patterns as masks. Accordingly, theamount of shift in the size of the resist patterns is reduced such thatthe precision of the size of the wiring patterns is improved.

[0059] The first antireflection coating film and the wiring materiallayer formed thereunder can be selectively etched using the resistpatterns and the patterns of the second antireflection coating film asmasks.

[0060] In order to form patterns of the first antireflection coatingfilm, the first antireflection coating film may be selectively removedby the anisotropic dry etching process which uses the resist patternsand the patterns of the second antireflection coating films as masks,and then the resist patterns and the patterns of the secondantireflection coating film may be removed. The patterns of the firstantireflection coating film can be used as masks in a later etchingprocess.

[0061] Such a thin resist layer as can serve only as a mask at the timeof etching the first and second antireflection coating films willsuffice. The use of the thin resist layer ensures an improved definitionin transferring the wiring patterns to the resist layer and permits thedepth of focus to be greater than the thickness of the resist layer sothat fine wiring patterns can be transferred with high accuracy to theresist layer.

[0062] Thus, a lamination film including a TiON (or TiN) film and anorganic antireflection coating film stacked thereon is used as theantireflection coating provided under the resist layer. This permits theorganic antireflection coating film to be formed thin so that the amountof shift in the size of the resist layer at the time of etching theorganic antireflection coating film is reduced to improve the wiringpatterning accuracy.

[0063] After the removal of the resist layer and the patterns of theorganic antireflection coating film, the patterns of the TiON (or TiN)film can be used as masks in etching the wiring material layer. Thisallows the resist layer to be formed thin so that the accuracy of thetransfer of fine wiring patterns to the resist layer is improved toincrease the yield of the wiring formation.

BRIEF DESCRIPTION OF THE DRAWINGS

[0064]FIG. 1 is a sectional view of a substrate which shows the step offorming the wiring material layer according to the wiring forming methodof the first embodiment of the present invention;

[0065]FIG. 2 is a sectional view of the substrate which shows the stepof forming the first antireflection coating film subsequently to thestep of FIG. 1;

[0066]FIG. 3 is a sectional view of the substrate which shows the stepof forming the second antireflection coating film subsequently to thestep of FIG. 2;

[0067]FIG. 4 is a sectional view of the substrate which shows the stepof forming the resist layer subsequently to the step of FIG. 3;

[0068]FIG. 5 is a sectional view of the substrate which shows the stepof applying dry etching to the second antireflection coating filmsubsequently to the step of FIG. 4;

[0069]FIG. 6 is a sectional view of the substrate which shows the stepof applying dry etching to the first antireflection coating filmsubsequently to the step of FIG. 5;

[0070]FIG. 7 is a sectional view of the substrate which shows the stepof applying dry etching to the wiring material layer subsequently to thestep of FIG. 6;

[0071]FIG. 8 is a sectional view of the substrate which shows the stepof removing the resist layer and the second antireflection coating filmsubsequently to the step of FIG. 7;

[0072]FIG. 9 is a sectional view of the substrate which shows the stepof removing, subsequently to the step of FIG. 6, the resist layer andthe second antireflection coating film according to the wiring formingmethod of the second embodiment of the present invention;

[0073]FIG. 10 is a sectional view of the substrate which shows the stepof applying dry etching to the wiring material layer subsequently to thestep of FIG. 9;

[0074]FIG. 11 is a sectional view showing an ECR type plasma etcher usedfor the dry etching;

[0075]FIG. 12 is a graph showing the dependence of the reflectance onthe film thickness, which dependence has been obtained by performing acomputer simulation as regards the organic antireflection coating film Qand the lamination film R which includes a TiON film and an organicantireflection coating film stacked on the TiON film; and

[0076]FIG. 13 is a graph showing the dependence of the reflectance onthe film thickness, which dependence has been obtained by performing acomputer simulation as regards the TiON film P.

[0077]FIG. 14 is a diagram illustrating a model of a multi-layerstructure used in computer simulation.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0078] FIGS. 1 to 8 illustrate the wiring forming method according tothe first embodiment of the present invention. The steps (1) to (8),illustrated in FIGS. 1 to 8, respectively, will now be explained insequence.

[0079] (1) A silicon oxide insulation film 12 with an aperture 11 isformed by the LOCOS (Local Oxidation of Silicon) on a surface of asemiconductor substrate 10 which is made of silicon or the like. A gateoxide film 13 is formed by thermal oxidation in the aperture 11 for atransistor to be isolated from other elements by the insulation film 12.A wiring material layer 14 for forming a gate electrode and a gatewiring is formed on the substrate surface. A lamination layer (aWSi₂/polysilicon type polycide layer) which includes, for example, apolysilicon layer 14 a and a WSi₂ layer 14 b stacked thereon, can beformed as the wiring material layer 14.

[0080] (2) A first antireflection coating film 16 which is made of TiON(or TiN) is formed on the wiring material layer 14 by a sputteringmethod or the like. The thickness of the antireflection layer 16 isabout 40 nm, for example.

[0081] (3) A second antireflection coating film (an organicantireflection coating film) 18, which is made of an organic material,is formed on the antireflection coating film 16 by the spin coatingmethod. The thickness of the antireflection coating film 18 is about 45nm, for example. The antireflection coating film may be the acrylicpolymer having side chains which absorb lights of 248 nm, as describedabove.

[0082] (4) A resist layer is coated on the antireflection coating film18, and resist patterns 20 a to 20 c are formed by photolithography inaccordance with the required wiring patterns. Specifically, the resistlayer is formed on the antireflection layer 18 by the spin coatingmethod or the like, to a thickness of 0.5 μm or more, after which thewiring patterns are transferred from a photomask to the resist layerthrough utilization of a far ultraviolet exposure apparatus which uses aKrF excimer laser beam as a light source. At that time, since thelamination film which includes the antireflection coating films 16 and18 suppresses the reflection of light from the interface between thefilm 16 and the wiring material layer 14, the accuracy of the patterntransfer to the resist layer is improved. After the light exposure, theresist layer is subjected to developing, thus attaining the resistpatterns.

[0083]FIG. 12 shows the dependence R of the reflectance on the filmthickness. This dependence was obtained by performing a computersimulation as regards a lamination film R provided on a WSi₂ layer. Thelamination film R in this case includes the TiON film corresponding tothe antireflection coating film 16 and the organic antireflectioncoating film corresponding to the antireflection coating film 18 andstacked on the TiON film. Computer simulation was done under theconditions as described above. Since the TiON film has the same effectwhen it has a thickness of 40 nm or more, the thickness of the TiON filmwas fixed at 40 nm. The thickness of the organic film was varied in therange of 0-150 nm. The abscissa of FIG. 12 represents the thickness ofthe organic film 18. The computer simulation was conducted under thefollowing conditions:

[0084] Wavelength of light: 248 nm

[0085] Refractive index “n” and extinction coefficient “k”

[0086] of TiON film corresponding to the film 16:

[0087] n=2.28

[0088] k=1.5

[0089] Refractive index “n” and extinction coefficient “k”

[0090] of the organic film corresponding to the film 18:

[0091] n=1.654

[0092] k=0.23

[0093] Refractive index “n” and extinction coefficient “k”

[0094] of the WSi₂ layer 14 b:

[0095] n−2.5

[0096] k=3.15

[0097] Reflectance at TiON/WSi₂ interface: 54.9%

[0098] It can be understood from FIG. 12 that in any one of the filmthickness ranges A and B, the reflectance variations versus the filmthickness variations, associated with the lamination film R, weresmaller than those of the organic antireflection film Q, and in the filmthickness range A, the reflectance attained by the lamination film R waslower than that attained by the organic antireflection film Q.

[0099] In the above-described embodiment, since the lamination filmincluding the films 16 and 18 is formed within a film thickness rangesuch as the range B, the reflectance variations are small and theaccuracy of the pattern transfer is high even if the thickness of thelamination film varies due to the unevenness of the surface of thewiring material layer 14. In the case where a thinner lamination film isdesired, the lamination film including the films 16 and 18 may be formedwithin a film thickness range such as the range A.

[0100] After a process for exposing the resist film to light isfinished, the resist film is subjected to a developing process, thusattaining the resist patterns 20 a to 20 c corresponding to the requiredwiring patterns.

[0101] (5) By the anisotropic dry etching process which uses the resistpatterns 20 a to 20 c as masks, the antireflection coating film 18 isselectively removed so that parts 18 a to 18 c of the antireflectioncoating film 18 are left in correspondence with the resist patterns 20 ato 20 c. The dry etching of the antireflection coating film 18 can beconducted using an oxygen and/or nitrogen plasma or using a chlorineplasma.

[0102] As an example, the dry etching of the antireflection film 18 isperformed using a plasma etcher of Electron Cyclotron Resonance (ECR)type which is illustrated in FIG. 11.

[0103] In the etcher depicted in FIG. 11, a wafer stage 32 forsupporting a to-be-processed wafer 34 such as the semiconductorsubstrate 10 is provided at the bottom of an etching chamber 30. Anon-illustrated coolant circulation system circulates a coolant along acoolant path 32 a provided in the wafer stage 32, thereby maintainingthe temperature of the wafer stage 32 at a predetermined value. A highfrequency power source RF of 13.56 MHz is connected between the waferstage 32 and the ground.

[0104] An exhaust tube 36 arranged in the lower part of the etchingchamber 30 is coupled to a non-illustrated exhaust or evacuation system.The etching chamber 30 is kept in an evacuated state by being subjectedto the evacuation performed through the exhaust tube 36.

[0105] An etching gas EG is supplied to the etching chamber 30 through agas introduction tube 38. The plasma of the etching gas is generated byapplying a magnetic B acting in the axial direction of the etchingchamber 30 through utilization of electromagnetic coils 40 a and 40 b,and by supplying 2.45 GHz microwaves from a non-illustrated magnetron tothe etching chamber 30. Due to the plasma, etching proceeds on a surfaceof the to-be-processed wafer 34.

[0106] In the case of etching the antireflection coating film 18 byusing the etcher illustrated in FIG. 11, the following etchingconditions can be adopted as an example:

[0107] Pressure in chamber: 1 mTorr

[0108] Gas flow amount: Cl₂=20 sccm

[0109] Microwave power: 600W

[0110] High frequency power: 60W

[0111] Coolant temperature at wafer stage: −20 to +20° C.

[0112] The following etching conditions can also be adopted as anotherexample:

[0113] Pressure in chamber: 1 mTorr

[0114] Gas flow amount: O₂/Cl₂=20/5 sccm

[0115] Microwave power: 600W

[0116] High frequency power: 60W

[0117] Coolant temperature at wafer stage: +5 to +20° C.

[0118] (6) By the anisotropic dry etching process which uses the resistpatterns 20 a to 20 c and the residual parts 18 a to 18 c of theantireflection coating film 18 as masks, the antireflection coating film16 is selectively removed so that parts 16 a to 16 c of theantireflection coating film 16 are left in correspondence with theresist patterns 20 a to 20 c. The dry etching of the antireflectioncoating film 16 can be performed using the plasma of a chlorinecontaining gas (a gas containing Cl₂, HCl or the like).

[0119] In the case of etching the antireflection coating film 16 made ofTiON (or TiN) by using the etcher illustrated in FIG. 11, the followingetching conditions can be employed as an example:

[0120] Pressure in chamber: 1 mTorr

[0121] Gas flow amount: Cl₂=25 sccm

[0122] Microwave power: 600W

[0123] High frequency power: 60W

[0124] Coolant temperature at wafer stage: −20 to +20° C.

[0125] The following etching conditions can also be employed as anotherexample:

[0126] Pressure in chamber: 1 mTorr

[0127] Gas flow amount: Cl₂/O₂=20/5 sccm

[0128] Microwave power: 600W

[0129] High frequency power: 60W

[0130] Coolant temperature at wafer stage: +5 to +20° C.

[0131] (7) By the anisotropic dry etching process which uses the resistpatterns 20 a to 20 c, the residual parts 18 a to 18 c of theantireflection coating film 18 and the residual parts 16 a to 16 c ofthe antireflection coating film 16 as masks, the wiring material layer14 is selectively removed so that parts 14A to 14C of the wiringmaterial layer 14 are left in correspondence with the resist patterns 20a to 20 c. The dry etching of the wiring material layer 14 can beconducted using the plasma of a gas in which a chlorine or brominecontaining gas (a gas containing Cl₂, HCl, Br₂, HBr or the like) andoxygen are mixed.

[0132] In the case of performing the dry etching of the wiring materiallayer 14 made of polycide of WSi₂ and polysilicon by using the etcherillustrated in FIG. 11, the following etching conditions can be adoptedas an example:

[0133] Pressure in chamber: 1 mTorr

[0134] Gas flow amount: Cl₂/O₂=25/9 sccm

[0135] Microwave power: 1400W

[0136] High frequency power: 40W

[0137] Coolant temperature at wafer stage: −20 to +20° C.

[0138] (8) The resist patterns 20 a to 20 c and the residual parts 18 ato 18 c of the antireflection coating film 18 are removed by an ashingtreatment which uses an oxygen plasma and/or a chemical treatment whichuses an amine containing solvent. Ashing may be done using a microwavedown-stream (down-flow) asher under the following conditions.

[0139] Flow rate:

[0140] O₂/N₂O=6/0.5 (slm)

[0141] (N₂O may not be used),

[0142] pressure: 4 Torr,

[0143] μ-wave power: 400W,

[0144] substrate stage temperature: 200-240° C., and

[0145] treatment time: 60 sec.

[0146] Chemical treatment using amine-containing liquid may use a mixedliquid of:

[0147] (1) dimethyl-sulfoxide (C₂H₆OS, which is also called DMSO andmethyl-sulfoxide) of 30%, and

[0148] (2) monoethanolamine (C₂H₇NO) of 70%,

[0149] and rinses the substrate for ten minutes in the mixed liquidheated to 85-90° C. As a result, the lamination layer including theresidual part 14 a of the wiring material layer 14 and the residual part16 a of the antireflection coating film 16, the lamination layerincluding the residual part 14 b of the wiring material layer 14 and theresidual part 16 b of the antireflection coating film 16, and thelamination layer including the residual part 14 c of the wiring materiallayer 14 and the residual part 16 c of the antireflection coating film16 are left as wiring patterns 22 a to 22 c, respectively.

[0150] A chemical treatment using H₂SO₂/H₂O₂ may be employed as anotherremoving method. With this chemical treatment, the residual parts 16 ato 16 c of the antireflection coating film 16 can also be removed inaddition to the resist patterns 20 a to 20 c and the residual parts 18 ato 18 c of the antireflection coating film 18. In this case, theresidual parts 14 a to 14 c of the wiring material layer 14 are left asthe wiring patterns.

[0151] According to the above-described embodiment, the firstantireflection coating film 16 which is made of TiON or TiN is providedunder the second antireflection coating film 18 which is made of anorganic material. This permits the second antireflection coating film 18to be formed thin. When the thickness of the antireflection coating film16 is 40 nm and the thickness of the antireflection coating film 18 is35 nm as mentioned previously, the thickness of the lamination film Rshown in FIG. 12 is 75 nm. For obtaining sufficient antireflectioneffect, the reflectance is appropriately 3% or less and the thickness ofthe antireflection coating preferably lies in a range where thevariation of reflectance is small. In the case of the laminate R, theseconditions are satisfied when the film thickness is 75 nm. In FIG. 12,that thickness of the antireflection coating film Q which makes itpossible to attain almost the same antireflectivity as that attained bythe 75 nm lamination film R is approximately 110 nm. Thus, compared tothe organic antireflection coating film Q which is used singly, thethickness of the organic antireflection coating film 18 is approximatelyhalf or less, and the time required to carry out the etching step shownin FIG. 5 is also approximately half or less. Accordingly, the amount ofshift in the size of the resist pattern 20 a et seq. is reduced, withthe result that the precision of the size of the wiring patterns isimproved.

[0152]FIGS. 9 and 10 shows a wiring forming method according to thesecond embodiment of the present invention. In the second embodiment,the steps carried out before the step shown in FIG. 9 are the same asthose shown in FIGS. 1 to 6. However, the resist patterns 20 a to 20 care formed thin in such a degree that they serve only as the masks usedin the dry etching of the antireflection coating films 18 and 16. Thethickness of the resist layer needs to be 0.3 μm or more.

[0153] In the step of FIG. 9, subsequently to the step of FIG. 6, theresist patterns 20 a to 20 c and the residual parts 18 a to 18 c of theantireflection coating film 18 are removed by the ashing treatment whichuses an oxygen plasma and/or the chemical treatment which uses an aminecontaining solvent. The residual parts 16 a to 16 c of theantireflection coating film 16 are left as they are.

[0154] In the step of FIG. 10, by the anisotropic dry etching processwhich uses the residual parts 16 a to 16 c of the antireflection coatingfilm 16 as masks, the wiring material layer 14 is selectively removed sothat the parts 14A to 14C of the wiring material layer 14 are left incorrespondence with the patterns of the residual parts 16 a to 16 c. Thedry etching of the wiring material layer 14 can be conducted in the samemanner as that described previously in regard to the step shown in FIG.7. As a result, the lamination layer including the residual parts 14 aand 16 a, the lamination layer including the residual parts 14 b and 16b, and the lamination layer including the residual parts 14 c and 16 care left as the wiring layers 22 a to 22 c, respectively.

[0155] In the above-described second embodiment, the firstantireflection coating film 16 which is made of TiON or TiN is providedunder the second antireflection coating film 18 which is made of anorganic material. This ensures an improvement in the precision of thesize of the wiring patterns, as in the case of the first embodiment.

[0156] Further, since the wiring material layer 14 is patterned usingthe residual parts 16 a to 16 c of the antireflection coating film 16 asmasks after the removal of the resist patterns 20 a to 20 c and theresidual parts 18 a to 18 c of the antireflection coating film 18, theresist layer can be formed thin by a resist coating step. Due to this,the definition and the depth of focus when transferring the wiringpatterns to the resist layer can be improved, and accordingly theaccuracy with which fine wiring patterns are transferred to the resistlayer can be improved to increase the yield of the formation of a finewiring.

[0157] The present invention is not limited to the above-describedembodiments, and various modifications can be made. For example, thewiring is not limited to a gate wiring, and may be any kind of wiringsuch as a source/drain wiring, an upper layer wiring, etc. The materialof the wiring material layer 14 is not limited to polycide of WSi₂ andpolysilicon, and other types of polycide, a metal having a high meltingpoint such as W, silicide like MoSi2, polysilicon, Al, an Al alloy, Cu,an Cu alloy, etc. can also be adopted. As regards this general knowledgeof semiconductor devices, a reference may be made to U.S. Pat. No.5,707,883, which is incorporated herein by reference.

What is claimed is:
 1. A wiring forming method comprising: forming awiring material layer on an insulation film covering one of majorsurfaces of a substrate; forming a first antireflection coating filmmade of Ti(O)N on said wiring material layer; forming a secondantireflection coating film made of an organic material directly on saidfirst antireflection coating film; and forming a resist layer on alamination film which includes said first and second antireflectioncoating films, and exposing said resist layer to light in accordancewith predetermined wiring patterns.
 2. A wiring forming method whereinsaid wiring material layer is a polycide.